inchange semiconductor product specification silicon pnp power transistors 2N6436 2n6437 2n6438 description ? with to-3 package ? high dc current gain ? fast switching times ? low collector saturation voltage ? complement to type 2n6338~2n6341 applications ? for use in industrial-military power amplifier and switching circuit applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2N6436 -100 2n6437 -120 v cbo collector-base voltage 2n6438 open emitter -140 v 2N6436 -80 2n6437 -100 v ceo collector-emitter voltage 2n6438 open base -120 v v ebo emitter-base voltage open collector -6 v i c collector current -25 a i cm collector current-peak -50 a i bc base current -10 a p d total power dissipation t c =25 ?? 200 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 ?? /w fig.1 simplified outline (to-3) and symbol ?? inchange semiconductor
inchange semiconductor product specification 2 silicon pnp power transistors 2N6436 2n6437 2n6438 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N6436 -80 2n6437 -100 v (sus)ceo collector-emitter sustaining voltage 2n6438 i c =-50ma ;i b =0 -120 v v cesat-1 collector-emitter saturation voltage i c =-10a; i b =-1.0a -1.0 v v cesat-2 collector-emitter saturation voltage i c =-25a; i b =-2.5a -1.8 v v be sat-1 base-emitter saturation voltage i c =-10a; i b =-1.0a -1.8 v v be sat-2 base-emitter saturation voltage i c =-25a; i b =-2.5a -2.5 v i cex collector cut-off current v ce =rated v ceo ; v eb =-1.5v t c =150 ?? -10 -1.0 | a ma i cbo collector cut-off current v cb =rated v cb ; i e =0 -10 | a 2N6436 v ce = -40v,i b =0 2n6437 v ce =- 50v,i b =0 i ceo collector cut-off current 2n6438 v ce = -60v,i b =0 -50 | a i ebo emitter cut-off current v eb =-6v; i c =0 -100 | a h fe-1 dc current gain i c =-0.5a ; v ce =-2v 30 h fe-2 dc current gain i c =-10a ; v ce =-2v 20 120 h fe-3 dc current gain i c =-25a ; v ce =-2v 12 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 700 pf f t transition frequency i c =-1a ; v ce =-10v;f=10mhz 40 mhz ?? inchange semiconductor
inchange semiconductor product specification 3 silicon pnp power transistors 2N6436 2n6437 2n6438 package outline fig.2 outline dimensions ?? inchange semiconductor
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